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PD - 94830
l l l l l l l
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
HEXFET(R) Power MOSFET
D
IRLZ34NPBF
VDSS = 55V
G S
RDS(on) = 0.035 ID = 30A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
30 21 110 68 0.45 16 110 16 6.8 5.0 -55 to + 175 300 (1.6mm from case) 10 lbfin (1.1Nm)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min.

Typ.
0.50
Max.
2.2 62
Units
C/W
11/11/03
IRLZ34NPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. 55 1.0 11
Typ. 0.065 8.9 100 21 29
Max. Units Conditions V V GS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.035 V GS = 10V, ID = 16A 0.046 V GS = 5.0V, ID = 16A 0.060 V GS = 4.0V, ID = 14A 2.0 V V DS = V GS, ID = 250A S V DS = 25V, ID = 16A 25 V DS = 55V, VGS = 0V A 250 V DS = 44V, VGS = 0V, TJ = 150C 100 V GS = 16V nA -100 V GS = -16V 25 ID = 16A 5.2 nC V DS = 44V 14 V GS = 5.0V, See Fig. 6 and 13 V DD = 28V ID = 16A ns RG = 6.5, VGS = 5.0V RD = 1.8, See Fig. 10 Between lead, 4.5 6mm (0.25in.) nH from package 7.5 and center of die contact 880 V GS = 0V 220 pF V DS = 25V 94 = 1.0MHz, See Fig. 5
D
G S
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol 30 showing the A G integral reverse 110 p-n junction diode. 1.3 V TJ = 25C, IS = 16A, VGS = 0V 76 110 ns TJ = 25C, IF = 16A 190 290 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Repetitive rating; pulse width limited by
Notes:
max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 610H RG = 25, IAS = 16A. (See Figure 12)
ISD 16A, di/dt 270A/s, VDD V(BR)DSS, Pulse width 300s; duty cycle 2%.
TJ 175C
IRLZ34NPBF
1000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
1000
100
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
100
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
10
10
2.5V
1
1
2.5V
0.1 0.1
20s PULSE WIDTH T J = 25C
1 10
100
A
0.1 0.1
20s PULSE WIDTH T J = 175C
1 10
100
A
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 27A
I D , Drain-to-Source Current (A)
2.5
100
TJ = 25C TJ = 175C
2.0
10
1.5
1.0
1
0.5
0.1 2 3 4 5 6
V DS = 25V 20s PULSE WIDTH
7 8 9 10
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRLZ34NPBF
1400
VGS , Gate-to-Source Voltage (V)
1200
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = C ds + C gd
15
I D = 16A V DS = 44V V DS = 28V
12
C, Capacitance (pF)
1000
800
9
Coss
600
6
400
Crss
200
3
0 1 10 100
A
0 0 4 8 12 16
FOR TEST CIRCUIT SEE FIGURE 13
20 24 28 32
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
I D , Drain Current (A)
100 10s
TJ = 175C TJ = 25C
10
100s 10 1ms
1 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VGS = 0V
1.8
A
1 1
TC = 25C TJ = 175C Single Pulse
10
10ms 100
2.0
A
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRLZ34NPBF
40
VDS V GS
RD
I D , Drain Current (A)
30
RG 5.0V
D.U.T.
+
-V DD
20
Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
VDS 90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1
0.1
0.02 0.01
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRLZ34NPBF
VDS
EAS , Single Pulse Avalanche Energy (mJ)
L D.U.T.
250
TOP
200
BOTTOM
ID 6.6A 11A 16A
RG
+
V - DD
5.0 V
IAS tp
0.01
150
Fig 12a. Unclamped Inductive Test Circuit
100
50
V(BR)DSS tp VDD VDS
0
VDD = 25V
25 50 75 100 125 150
175
A
Starting TJ , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRLZ34NPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRLZ34NPBF
TO-220AB Package Outline
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
Dimensions are shown in millimeters (inches)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- EMITTER 3- SOURCE 4 - DRAIN
LEAD ASSIGNMENTS
HEXFET
14.09 (.555) 13.47 (.530)
4- DRAIN
4.06 (.160) 3.55 (.140)
4- COLLECTOR
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010 LOT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y LINE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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